indus t rial po wer c o ntrol diod e silicon carbide schottky diode final da ta s heet rev. 2 .0 2015 - 22 - 07 id m10g 120c5 5 th generation thinq!? 1200 v sic schottky diode
1) j - std20 and jesd22 final data sheet 2 rev. 2 .0 , 2015 - 2 2 - 07 5 th generation thinq!? 1200 v sic schottky diode idm10 g120c5 sic schottky diode features : ? revolutionary semiconductor material - silicon carbide ? no reverse recovery current / no forward recovery ? temperature independent switching behavior ? low forward voltage even at high operating temperature ? tight forward voltage distribution ? excellent thermal performance ? extended surge current capability ? specified dv/dt ruggedness ? qualified according to jedec 1) for target applications ? pb - free lead plating; rohs compliant benefits ? system efficiency improvement over si diodes ? system cost / size savings due to reduced cooling requirements ? enabling higher frequency / increased power density solutions ? higher system reliability due to lower operating temperatures ? reduced emi ? related links: www.infineon.com/sic applications ? solar inverters ? u ninterruptable power supplies ? m otor drives ? power factor correction package pin definitions ? pin 1 and backside C cathode ? pin 2 C anode key performance and package parameter s type v dc i f q c t j,max marking package 1 2
1) j - std20 and jesd22 final data sheet 3 rev. 2 .0 , 2015 - 2 2 - 07 5 th generation thinq!? 1200 v sic schottky diode idm10 g120c5 id m 10 g120c5 1200v 10 a 41 nc 175c d 10 12 c 5 pg - to 252 - 2 table of contents description. ................................ ................................ ................................ ................................ ............. 2 table of contents ................................ ................................ ................................ ................................ ........ 3 maximum ratings ................................ ................................ ................................ ................................ ......... 4 thermal resistances ................................ ................................ ................................ ................................ .. 4 electrical characteristics ................................ ................................ ................................ ............................. 5 electrical characteristics diagram ................................ ................................ ................................ .............. 5 package drawings ................................ ................................ ................................ ................................ ...... 9 revision history ................................ ................................ ................................ ................................ ........ 10 disclaimer . ................................ ................................ ................................ ................................ ............. 10
final data sheet 4 rev. 2 .0 , 2015 - 22 - 07 5 th generation thinq!? 1200 v sic schottky diode idm10 g120c5 maximum ratings parameter symbol value unit repetitive peak reverse voltage v rrm 1200 v continoues forward current for r th(j - c,max) t c = 1 60 c, d=1 t c = 135c, d=1 t c = 25c, d=1 i f 10 1 8 3 8 a surge non - repetitive forward current, sine halfwave t c =25c, t p =10ms t c =150c, t p =10ms i f,sm 99 8 4 non - repetitive peak forward current t c = 2 5 c, t p =10 s i f,max 711 i2t value t c = 25c, t p =10 ms t c = 150c, t p =10 ms i2dt 49 35 a2s diode d v /d t ruggedness v r =0. . .960 v d v /d t 80 v/ns power dissipation t c = 25c p tot 2 23 w operating temperature t j - 55 175 c storage temperature t stg - 55150 soldering temperature, wave - and reflow soldering allowed (reflow msl1) t sold 260 thermal resistances parameter symbol conditions value unit min. typ. max. characteristic diode thermal resistance, junction C case r th(j - c) - 0. 5 0. 7 k/w thermal resistance, junction C ambient r th(j - a) smd version, device on pcb, minimal footprint - - 62 smd version, device on pcb, 6 cm2 cooling area 2 ) 35 2 ) device on 40 mm*40mm*1.5 epoxy pcb fr4 with 6cm2 (one layer, 70m thick) copper for cathode connection. pcb is vertical without air stream cooling.
final data sheet 5 rev. 2 .0 , 2015 - 22 - 07 5 th generation thinq!? 1200 v sic schottky diode idm10 g120c5 electrical characteristics static characteristic , at t j =25c, unless otherwise specified parameter symbol conditions value unit min. typ. max. dc blocking voltage v dc t j = 25c 1200 - - v diode forward voltage v f i f = 10 a, t j =25c i f = 10 a, t j =150c - - 1. 5 2 . 0 1. 8 2 . 6 v reverse current i r v r =1200 v, t j =25c v r =1200 v, t j =150c 4 22 62 32 0 a dynamic characteristics , at t j =25c, unless otherwise specified parameter symbol conditions value unit min. typ. max. total capacitive charge q c v r = 8 00 v, t j =150c - 41 - nc total capacitance c v r =1 v, f =1 mhz v r =400 v, f =1 mhz v r =800 v, f =1 mhz - - - 525 37 29 - - - pf electrical characteristics diagram ? ? r v c dv v c q 0 ) (
final data sheet 6 rev. 2 .0 , 2015 - 22 - 07 5 th generation thinq!? 1200 v sic schottky diode idm10 g120c5 figure 1 . power dissipation as a function of case temperature, p tot =f( t c ), r th(j - c),max figure 2 . diode forward current as function of temperature , t j 175c, r th(j - c),max , parameter d =duty cycle, v th , r diff @ t j =175c figure 3 . typical forward characteristics , i f =f( v f ), t p = 10 s, parameter: t j figure 4 . typical forward characteristic s in surge current , i f =f( v f ) , t p = 10 s , parameter: t j
final data sheet 7 rev. 2 .0 , 2015 - 22 - 07 5 th generation thinq!? 1200 v sic schottky diode idm10 g120c5 figure 5 . typical capacitance charge as function of current slope 1 , q c =f( di f / dt ), t j = 150c 1) only capacitive charge, guaranteed by design. figure 6 . typical reverse current as function of reverse voltage, i r =f( v r ), parameter: t j figure 7 . m ax. transient thermal impedance , z th,jc =f( t p ) , parameter: d= t p / t figure 8 . typical capacitance as function of reverse voltage, c= f( v r ); t j =25 c; f =1 mhz
final data sheet 8 rev. 2 .0 , 2015 - 22 - 07 5 th generation thinq!? 1200 v sic schottky diode idm10 g120c5 figure 9 . typical capacitance stored energy as function of reverse voltage, ? ? r v c vdv v c e 0 ) (
final data sheet 9 rev. 2 .0 , 2015 - 22 - 07 5 th generation thinq!? 1200 v sic schottky diode idm10 g120c5 package drawings pg - to252 - 2
final data sheet 10 rev. 2 .0 , 2015 - 22 - 07 5 th generation thinq!? 1200 v sic schottky diode idm10 g120c5 revision history disclaimer we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com published by infineon technologies ag 81726 munich, germany ? 201 5 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the appli cation of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangero us substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation an d aerospace applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system o r to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume t hat the health of the user or other persons may be endangered. iid m 10 g120c5 revision: 2015 - 22 - 07 , rev. 2 .0 previous revision: revision date subjects (major changes since last version) 2 .0 - final data sheet
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